Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN2004WK-7 MOSFET N-CH 20V 540MA SOT323 Diodes Incorporated	292,069 In Stock 5,871,000 Factory	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.54777 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	540mA (Ta)	1.8V, 4.5V	550mOhm @ 540mA, 4.5V	1V @ 250µA	-	±8V	150 pF @ 16 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-323	SC-70, SOT-323
DMP3099L-7 MOSFET P-CH 30V 3.8A SOT23 Diodes Incorporated	289,587 In Stock	1 : ¥2.71000 Cut Tape (CT) 3,000 : ¥0.49038 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.8A (Ta)	4.5V, 10V	65mOhm @ 3.8A, 10V	2.1V @ 250µA	5.2 nC @ 4.5 V	±20V	563 pF @ 25 V	-	1.08W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG1012UW-7 MOSFET N-CH 20V 1A SOT323 Diodes Incorporated	521,897 In Stock 9,066,000 Factory	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.46761 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1A (Ta)	1.8V, 4.5V	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.74 nC @ 4.5 V	±6V	60.67 pF @ 16 V	-	290mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.