Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
25 V55 V100 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)1.9A (Ta)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V6V, 10V10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 90A, 10V160mOhm @ 1.9A, 10V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250µA3.5V @ 90µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V11 nC @ 10 V68 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V190 pF @ 25 V4910 pF @ 50 V
Power Dissipation (Max)
350mW (Ta)1W (Ta)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO252-3SOT-223SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
364,503
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT223-3L
IRFL014NTRPBF
MOSFET N-CH 55V 1.9A SOT223
Infineon Technologies
12,670
In Stock
1 : ¥5.42000
Cut Tape (CT)
2,500 : ¥2.07015
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
1.9A (Ta)
10V
160mOhm @ 1.9A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
190 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO252-3
IPD068N10N3GATMA1
MOSFET N-CH 100V 90A TO252-3
Infineon Technologies
11,201
In Stock
1 : ¥12.89000
Cut Tape (CT)
2,500 : ¥7.67515
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
6V, 10V
6.8mOhm @ 90A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4910 pF @ 50 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.