Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)3A (Ta)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
6.9mOhm @ 30A, 10V120mOhm @ 1.5A, 5V10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.4V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V345 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 25 V440 pF @ 25 V11400 pF @ 25 V
Power Dissipation (Max)
330mW (Ta)1.3W (Ta)3.75W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-223 (TO-261)SOT-23-3TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZVN3310FTA
MOSFET N-CH 100V 100MA SOT23-3
Diodes Incorporated
4,347
In Stock
978,000
Factory
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.86650
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100mA (Ta)
10V
10Ohm @ 500mA, 10V
2.4V @ 1mA
-
±20V
40 pF @ 25 V
-
330mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-223 (TO-261)
NTF3055L108T1G
MOSFET N-CH 60V 3A SOT223
onsemi
12,339
In Stock
1 : ¥7.06000
Cut Tape (CT)
1,000 : ¥3.00101
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
5V
120mOhm @ 1.5A, 5V
2V @ 250µA
15 nC @ 5 V
±15V
440 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
TO-263 (D2Pak)
SUM110P06-07L-E3
MOSFET P-CH 60V 110A TO263
Vishay Siliconix
58,659
In Stock
1 : ¥30.13000
Cut Tape (CT)
800 : ¥18.18246
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
4.5V, 10V
6.9mOhm @ 30A, 10V
3V @ 250µA
345 nC @ 10 V
±20V
11400 pF @ 25 V
-
3.75W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.