Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	131,174 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80297 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	1V @ 250µA	5 nC @ 10 V	±20V	85 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
AOD409 MOSFET P-CH 60V 26A TO252 Alpha & Omega Semiconductor Inc.	26,098 In Stock	1 : ¥7.22000 Cut Tape (CT) 2,500 : ¥2.99940 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	26A (Tc)	4.5V, 10V	40mOhm @ 20A, 10V	2.4V @ 250µA	54 nC @ 10 V	±20V	3600 pF @ 30 V	-	2.5W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR872DP-T1-GE3 MOSFET N-CH 150V 53.7A PPAK SO-8 Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥22.58000 Cut Tape (CT) 3,000 : ¥10.18347 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	53.7A (Tc)	10V	18mOhm @ 20A, 10V	3.5V @ 250µA	64 nC @ 10 V	±20V	2130 pF @ 75 V	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.