Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS123 MOSFET N-CH 100V 170MA SOT23-3 onsemi	18,922 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.51983 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200mA	4.5V, 10V	5Ohm @ 200mA, 10V	2.5V @ 250µA	1.8 nC @ 10 V	±20V	14 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SISA14DN-T1-GE3 MOSFET N-CH 30V 20A PPAK1212-8 Vishay Siliconix	15,838 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥2.00865 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	20A (Tc)	4.5V, 10V	5.1mOhm @ 10A, 10V	2.2V @ 250µA	29 nC @ 10 V	+20V, -16V	1450 pF @ 15 V	-	3.57W (Ta), 26.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
BSS123 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	93,554 In Stock	1 : ¥1.07000 Cut Tape (CT) 3,000 : ¥0.18956 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200mA (Ta)	4.5V, 10V	5Ohm @ 200mA, 10V	2.5V @ 250µA	1.8 nC @ 10 V	±20V	14 pF @ 50 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.