Single FETs, MOSFETs

Results: 2
Series
STripFET™STripFET™ F7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
80A (Tc)90A (Tc)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 40A, 10V5.4mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V3100 pF @ 30 V
Power Dissipation (Max)
4.8W (Ta), 94W (Tc)134W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)175°C (TJ)
Supplier Device Package
DPAKPowerFlat™ (5x6)
Package / Case
8-PowerVDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MFG_DPAK(TO252-3)
STD140N6F7
MOSFET N-CH 60V 80A DPAK
STMicroelectronics
3,876
In Stock
1 : ¥12.31000
Cut Tape (CT)
2,500 : ¥5.56044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
80A (Tc)
10V
3.8mOhm @ 40A, 10V
4V @ 250µA
55 nC @ 10 V
±20V
3100 pF @ 30 V
-
134W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
8 PowerVDFN
STL90N6F7
MOSFET N-CH 60V 90A POWERFLAT
STMicroelectronics
28,903
In Stock
1 : ¥13.38000
Cut Tape (CT)
3,000 : ¥6.03245
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
10V
5.4mOhm @ 10.5A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
1600 pF @ 25 V
-
4.8W (Ta), 94W (Tc)
175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.