Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
470mA (Ta)500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 5V3V, 5V
Rds On (Max) @ Id, Vgs
630mOhm @ 200mA, 5V1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 5 V1.23 nC @ 4 V
Vgs (Max)
±10V±12V
Input Capacitance (Ciss) (Max) @ Vds
12.9 pF @ 12 V46 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)390mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3VESM
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
439,962
In Stock
1 : ¥3.04000
Cut Tape (CT)
8,000 : ¥0.52095
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
500mA (Ta)
1.5V, 5V
630mOhm @ 200mA, 5V
1V @ 1mA
1.23 nC @ 4 V
±10V
46 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VESM
SOT-723
SOT-23-3
DMN61D8LQ-13
MOSFET N-CH 60V 470MA SOT23
Diodes Incorporated
27,697
In Stock
150,000
Factory
1 : ¥3.69000
Cut Tape (CT)
10,000 : ¥1.09823
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
470mA (Ta)
3V, 5V
1.8Ohm @ 150mA, 5V
2V @ 1mA
0.74 nC @ 5 V
±12V
12.9 pF @ 12 V
-
390mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.