Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)3.2A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
29mOhm @ 18A, 10V115mOhm @ 2.4A, 4.5V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V5.5 nC @ 4.5 V57 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V330 pF @ 10 V2030 pF @ 20 V
Power Dissipation (Max)
275mW (Ta)2W (Tc)83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-23-3 (TO-236)SOT-323
Package / Case
PowerPAK® SO-8SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
2N7002BKW,115
MOSFET N-CH 60V 310MA SOT323
Nexperia USA Inc.
49,525
In Stock
1 : ¥2.55000
Cut Tape (CT)
3,000 : ¥0.42781
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
50 pF @ 10 V
-
275mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
PowerPAK-SO-8-Single
SQJ443EP-T2_GE3
P-CHANNEL 40-V (D-S) 175C MOSFET
Vishay Siliconix
11,544
In Stock
1 : ¥13.55000
Cut Tape (CT)
3,000 : ¥3.61398
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
29mOhm @ 18A, 10V
2.5V @ 250µA
57 nC @ 10 V
±20V
2030 pF @ 20 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT-23-3
SQ2351ES-T1_GE3
MOSFET P-CH 20V 3.2A SOT23-3
Vishay Siliconix
19,514
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.59853
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Tc)
2.5V, 4.5V
115mOhm @ 2.4A, 4.5V
1.5V @ 250µA
5.5 nC @ 4.5 V
±12V
330 pF @ 10 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.