Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Series
-UniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
22mOhm @ 27.5A, 10V74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 4.5 V37 nC @ 10 V
Vgs (Max)
±12V±25V
Input Capacitance (Ciss) (Max) @ Vds
744 pF @ 20 V1510 pF @ 25 V
Power Dissipation (Max)
480mW (Ta)48W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220F-3TO-236AB
Package / Case
TO-220-3 Full PackTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV65XP,215
MOSFET P-CH 20V 2.8A TO236AB
Nexperia USA Inc.
253,416
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.75319
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.8A (Ta)
1.8V, 4.5V
74mOhm @ 2.8A, 4.5V
900mV @ 250µA
7.7 nC @ 4.5 V
±12V
744 pF @ 20 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-220F
FDPF55N06
MOSFET N-CH 60V 55A TO220F
onsemi
2,313
In Stock
6,000
Factory
1 : ¥14.78000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
55A (Tc)
10V
22mOhm @ 27.5A, 10V
4V @ 250µA
37 nC @ 10 V
±25V
1510 pF @ 25 V
-
48W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.