Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiRohm Semiconductor
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)14.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 14.9A, 10V170mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 5 V73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V3845 pF @ 15 V
Power Dissipation (Max)
700mW (Ta)2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-SOICTSMT3
Package / Case
8-SOIC (0.154", 3.90mm Width)SC-96
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS8842NZ
MOSFET N-CH 40V 14.9A 8SOIC
onsemi
5,030
In Stock
1 : ¥9.03000
Cut Tape (CT)
2,500 : ¥3.73622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
14.9A (Ta)
4.5V, 10V
7mOhm @ 14.9A, 10V
3V @ 250µA
73 nC @ 10 V
±20V
3845 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TSMT3
RQ5L020SNTL
MOSFET N-CH 60V 2A TSMT3
Rohm Semiconductor
8,130
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.61443
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
170mOhm @ 2A, 10V
2.5V @ 1mA
2.7 nC @ 5 V
±20V
180 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Surface Mount
TSMT3
SC-96
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.