Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.75V, 5V
Rds On (Max) @ Id, Vgs
450mOhm @ 600mA, 4.5V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V2.4 nC @ 10 V
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V60.67 pF @ 16 V
Power Dissipation (Max)
290mW (Ta)350mW (Ta)
Supplier Device Package
SOT-23-3SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
DMG1012UW-7
MOSFET N-CH 20V 1A SOT323
Diodes Incorporated
521,944
In Stock
8,844,000
Factory
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46763
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
1.8V, 4.5V
450mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
BSS138L
MOSFET N-CH 50V 200MA SOT23-3
onsemi
114,270
In Stock
849,000
Factory
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48378
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
2.75V, 5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
2.4 nC @ 10 V
±20V
50 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.