Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SSM3K37FS,LF MOSFET N-CH 20V 200MA SSM Toshiba Semiconductor and Storage	157,403 In Stock	1 : ¥1.64000 Cut Tape (CT) 3,000 : ¥0.32440 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.5V, 4.5V	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	±10V	12 pF @ 10 V	-	100mW (Ta)	150°C (TA)	-	-	Surface Mount	SSM	SC-75, SOT-416
FQT4N20LTF MOSFET N-CH 200V 850MA SOT223-4 onsemi	6,936 In Stock	1 : ¥6.49000 Cut Tape (CT) 4,000 : ¥2.45182 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	850mA (Tc)	5V, 10V	1.35Ohm @ 425mA, 10V	2V @ 250µA	5.2 nC @ 5 V	±20V	310 pF @ 25 V	-	2.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
BUK7M27-80EX MOSFET N-CH 80V 30A LFPAK33 Nexperia USA Inc.	11,288 In Stock	1 : ¥6.73000 Cut Tape (CT) 1,500 : ¥2.59430 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	30A (Tc)	10V	27mOhm @ 5A, 10V	4V @ 1mA	19.5 nC @ 10 V	±20V	1306 pF @ 25 V	-	62W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.