Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
-HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Ta)2.3A (Ta)23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 50A, 10V57mOhm @ 2.3A, 2.5V160mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id
750mV @ 11µA2V @ 250µA2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 2.5 V3.3 nC @ 4.5 V175 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V529 pF @ 10 V13000 pF @ 30 V
Power Dissipation (Max)
500mW (Ta)1.25W (Ta)2.5W (Ta), 139W (Tc)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
PG-SOT23PG-TDSON-8-1SOT-23-3
Package / Case
3-SMD, SOT-23-3 Variant8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
AO3422
MOSFET N-CH 55V 2.1A SOT23-3
Alpha & Omega Semiconductor Inc.
1,017,350
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86945
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
2.1A (Ta)
2.5V, 4.5V
160mOhm @ 2.1A, 4.5V
2V @ 250µA
3.3 nC @ 4.5 V
±12V
300 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
PG-TDSON-8-1
BSC028N06LS3GATMA1
MOSFET N-CH 60V 23A/100A TDSON
Infineon Technologies
7,993
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥9.55227
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Ta), 100A (Tc)
4.5V, 10V
2.8mOhm @ 50A, 10V
2.2V @ 93µA
175 nC @ 10 V
±20V
13000 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
SOT-23-3
BSS806NEH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
Infineon Technologies
64,061
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71245
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Ta)
1.8V, 2.5V
57mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7 nC @ 2.5 V
±8V
529 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.