Single FETs, MOSFETs

Results: 4
Manufacturer
EPCNexperia USA Inc.onsemi
Series
-eGaN®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)220mA (Ta)15A (Tc)90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V5V5V, 10V10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 5V102mOhm @ 5A, 10V4Ohm @ 400mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.06V @ 250µA2.5V @ 250µA2.5V @ 28mA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V12.2 nC @ 10 V33 nC @ 5 V
Vgs (Max)
+6V, -4V±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V50 pF @ 25 V779 pF @ 25 V4523 pF @ 20 V
Power Dissipation (Max)
225mW (Ta)350mW (Ta)60W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DieLFPAK56, Power-SO8SOT-23-3SOT-23-3 (TO-236)
Package / Case
DieSC-100, SOT-669TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
691,264
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
289,506
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
EPC2066
EPC2066
TRANSISTOR GAN 40V .001OHM
EPC
6,870
In Stock
1 : ¥49.34000
Cut Tape (CT)
1,000 : ¥27.98517
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
90A (Ta)
5V
1.1mOhm @ 50A, 5V
2.5V @ 28mA
33 nC @ 5 V
+6V, -4V
4523 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
LFPAK56/POWER-SO8/SOT669
BUK7Y102-100B,115
MOSFET N-CH 100V 15A LFPAK56
Nexperia USA Inc.
2,473
In Stock
1 : ¥6.40000
Cut Tape (CT)
1,500 : ¥2.71750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
15A (Tc)
10V
102mOhm @ 5A, 10V
4V @ 1mA
12.2 nC @ 10 V
±20V
779 pF @ 25 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.