Single FETs, MOSFETs

Results: 13
Manufacturer
Diodes IncorporatedInfineon TechnologiesIXYSNexperia USA Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
-HEXFET®HEXFET®, StrongIRFET™OptiMOS™StrongIRFET™TrenchTrenchFET® Gen IVU-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
460mA (Ta)600mA (Ta)6.2A (Ta)38A (Ta), 100A (Tc)240A (Tc)300A (Tc)400A (Ta)478A (Tc)500A (Tc)575A (Tc)660A (Tc)701A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
0.3mOhm @ 200A, 10V0.53mOhm @ 20A, 10V0.55mOhm @ 25A, 10V0.75mOhm @ 150A, 10V0.8mOhm @ 100A, 10V0.85mOhm @ 100A, 10V0.9mOhm @ 20A, 10V1mOhm @ 100A, 10V1.05mOhm @ 30A, 10V1.4mOhm @ 200A, 10V25mOhm @ 4A, 10V700mOhm @ 350mA, 4.5V900mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.8V @ 250µA2V @ 250µA2.4V @ 250µA2.5V @ 250µA3V @ 1mA3.3V @ 250µA3.3V @ 280µA3.5V @ 250µA3.6V @ 1mA3.9V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.622 nC @ 4.5 V18.4 nC @ 10 V59 nC @ 10 V145 nC @ 10 V180 nC @ 4.5 V267 nC @ 4.5 V267 nC @ 10 V287 nC @ 10 V288 nC @ 10 V295 nC @ 10 V315 nC @ 10 V860 nC @ 10 V
Vgs (Max)
±6V±8V±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
59.76 pF @ 16 V175 pF @ 16 V873 pF @ 15 V4200 pF @ 12 V9020 pF @ 25 V10250 pF @ 25 V10990 pF @ 40 V15270 pF @ 25 V16000 pF @ 30 V17000 pF @ 25 V21162 pF @ 25 V26910 pF @ 10 V44000 pF @ 25 V
Power Dissipation (Max)
270mW (Ta)550mW (Ta)900mW (Ta)2.5W (Ta), 96W (Tc)245W (Tc)375W (Tc)380W (Tc)600W (Tc)750W (Tc)1040W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface Mount
Supplier Device Package
D2PAK (7-Lead)D2PAK-7L-TOGL™LFPAK88 (SOT1235)PG-HSOF-8-1PG-TDSON-8-7PowerPAK® 8 x 8SOT-227BSOT-23-3SOT-523
Package / Case
8-PowerBSFN8-PowerSFN8-PowerTDFNPowerPAK® 8 x 8SOT-1235SOT-227-4, miniBLOCSOT-523TO-236-3, SC-59, SOT-23-3TO-263-7, D2PAK (6 Leads + Tab)TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1013T-7
MOSFET P-CH 20V 460MA SOT523
Diodes Incorporated
362,731
In Stock
7,521,000
Factory
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.41074
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
460mA (Ta)
1.8V, 4.5V
700mOhm @ 350mA, 4.5V
1V @ 250µA
0.622 nC @ 4.5 V
±6V
59.76 pF @ 16 V
-
270mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
SOT-23-3
DMN3023L-7
MOSFET N-CH 30V 6.2A SOT23
Diodes Incorporated
200,658
In Stock
5,859,000
Factory
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.80711
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.2A (Ta)
2.5V, 10V
25mOhm @ 4A, 10V
1.8V @ 250µA
18.4 nC @ 10 V
±20V
873 pF @ 15 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-263-7, D2Pak
IRL40SC209
MOSFET N-CH 40V 478A D2PAK
Infineon Technologies
2,847
In Stock
1 : ¥33.33000
Cut Tape (CT)
800 : ¥20.13938
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
478A (Tc)
4.5V, 10V
0.8mOhm @ 100A, 10V
2.4V @ 250µA
267 nC @ 4.5 V
±20V
15270 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
4,069
In Stock
1 : ¥52.05000
Cut Tape (CT)
1,500 : ¥26.89488
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
400A (Ta)
6V, 10V
0.3mOhm @ 200A, 10V
3V @ 1mA
295 nC @ 10 V
±20V
26910 pF @ 10 V
-
750W (Tc)
175°C
Automotive
AEC-Q101
Surface Mount
L-TOGL™
8-PowerBSFN
IPT059N15N3ATMA1
IPT007N06NATMA1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
14,842
In Stock
1 : ¥52.21000
Cut Tape (CT)
2,000 : ¥25.40434
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
SOT-23-3
DMP2004K-7
MOSFET P-CH 20V 600MA SOT23-3
Diodes Incorporated
944,889
In Stock
537,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.32204
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
900mOhm @ 430mA, 4.5V
1V @ 250µA
-
±8V
175 pF @ 16 V
-
550mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC010NE2LSIATMA1
MOSFET N-CH 25V 38A/100A TDSON
Infineon Technologies
18,267
In Stock
1 : ¥16.58000
Cut Tape (CT)
5,000 : ¥7.21090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
38A (Ta), 100A (Tc)
4.5V, 10V
1.05mOhm @ 30A, 10V
2V @ 250µA
59 nC @ 10 V
±20V
4200 pF @ 12 V
-
2.5W (Ta), 96W (Tc)
-
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
TO-263-7 DPak (6 LeadsTab)
IRFS7434TRL7PP
MOSFET N-CH 40V 240A D2PAK-7
Infineon Technologies
2,521
In Stock
1 : ¥18.39000
Cut Tape (CT)
800 : ¥12.23466
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
240A (Tc)
6V, 10V
1mOhm @ 100A, 10V
3.9V @ 250µA
315 nC @ 10 V
±20V
10250 pF @ 25 V
-
245W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-7, D2PAK (6 Leads + Tab)
PowerPAK-8x8L
SQJQ140E-T1_GE3
AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vishay Siliconix
9,651
In Stock
1 : ¥27.01000
Cut Tape (CT)
2,000 : ¥13.13750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
701A (Tc)
10V
0.53mOhm @ 20A, 10V
3.3V @ 250µA
288 nC @ 10 V
±20V
17000 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
D2PAK SOT427
IRLS3034TRL7PP
MOSFET N-CH 40V 240A D2PAK
Infineon Technologies
6,981
In Stock
1 : ¥29.14000
Cut Tape (CT)
800 : ¥13.63033
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
240A (Tc)
4.5V, 10V
1.4mOhm @ 200A, 10V
2.5V @ 250µA
180 nC @ 4.5 V
±20V
10990 pF @ 40 V
-
380W (Tc)
-
-
-
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
PSMN1R9-80SSEJ
PSMNR55-40SSHJ
PSMNR55-40SSH/SOT1235/LFPAK88
Nexperia USA Inc.
5,478
In Stock
1 : ¥55.42000
Cut Tape (CT)
2,000 : ¥29.69589
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
0.55mOhm @ 25A, 10V
3.6V @ 1mA
267 nC @ 10 V
±20V
21162 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
PowerPAK-8x8LR
SQJQ144AER-T1_GE3
AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vishay Siliconix
956
In Stock
1 : ¥22.17000
Cut Tape (CT)
2,000 : ¥10.78214
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
575A (Tc)
10V
0.9mOhm @ 20A, 10V
3.5V @ 250µA
145 nC @ 10 V
±20V
9020 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
IXYK1x0xNxxxx
IXTN660N04T4
MOSFET N-CH 40V 660A SOT227B
IXYS
0
In Stock
10 : ¥223.58600
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
660A (Tc)
10V
0.85mOhm @ 100A, 10V
4V @ 250µA
860 nC @ 10 V
±15V
44000 pF @ 25 V
-
1040W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.