Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
CoolMOS™ P7TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
300 V650 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)61A (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 22.5A, 10V330mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 1.08mA4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V90 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
2190 pF @ 25 V3891 pF @ 400 V
Power Dissipation (Max)
107W (Tc)201W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3-41TO-252AA
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AC EP
IPW60R045P7XKSA1
MOSFET N-CH 650V 61A TO247-3-41
Infineon Technologies
2,054
In Stock
1 : ¥55.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
61A (Tc)
10V
45mOhm @ 22.5A, 10V
4V @ 1.08mA
90 nC @ 10 V
±20V
3891 pF @ 400 V
-
201W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-252
SQD10N30-330H_4GE3
N-CHANNEL 300-V (D-S) 175C MOSFE
Vishay Siliconix
1,667
In Stock
1 : ¥12.97000
Cut Tape (CT)
2,500 : ¥5.37854
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
10A (Tc)
10V
330mOhm @ 14A, 10V
4.4V @ 250µA
47 nC @ 10 V
±30V
2190 pF @ 25 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.