Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)2.7A (Ta)
Rds On (Max) @ Id, Vgs
92mOhm @ 2.7A, 10V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V2.5 nC @ 4.5 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 25 V290 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)1.25W (Ta)
Supplier Device Package
Micro3™/SOT-23SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-T1-GE3
MOSFET N-CH 60V 300MA TO236
Vishay Siliconix
823,181
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39032
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 250µA
0.6 nC @ 4.5 V
±20V
30 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML0060TRPBF
MOSFET N-CH 60V 2.7A SOT23
Infineon Technologies
21,445
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.13547
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
92mOhm @ 2.7A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.