Single FETs, MOSFETs

Results: 2
Manufacturer
Texas InstrumentsVishay Siliconix
Series
NexFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Current - Continuous Drain (Id) @ 25°C
5A (Ta)50A (Ta)
Rds On (Max) @ Id, Vgs
14.5mOhm @ 10A, 10V34mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V30 nC @ 10 V
Power Dissipation (Max)
1.9W (Ta)2.8W (Ta), 83W (Tc)
Supplier Device Package
8-VSON-CLIP (3.3x3.3)PowerPAK® SO-8
Package / Case
8-PowerTDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSD19537Q3
CSD19537Q3
MOSFET N-CH 100V 9.7A/50A 8VSON
Texas Instruments
4,597
In Stock
1 : ¥9.85000
Cut Tape (CT)
2,500 : ¥4.07443
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
6V, 10V
14.5mOhm @ 10A, 10V
3.6V @ 250µA
21 nC @ 10 V
±20V
1680 pF @ 50 V
-
2.8W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
PowerPAK SO-8
SI7454DP-T1-E3
MOSFET N-CH 100V 5A PPAK SO-8
Vishay Siliconix
18,545
In Stock
1 : ¥15.76000
Cut Tape (CT)
3,000 : ¥7.11872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
5A (Ta)
6V, 10V
34mOhm @ 7.8A, 10V
4V @ 250µA
30 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.