Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V250 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.7A, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 1mA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V220 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)50W (Tc)
Supplier Device Package
DPAKSOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
371,445
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
D-PAK (TO-252AA)
IRFR9214TRPBF
MOSFET P-CH 250V 2.7A DPAK
Vishay Siliconix
5,761
In Stock
1 : ¥12.23000
Cut Tape (CT)
2,000 : ¥5.51412
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
250 V
2.7A (Tc)
10V
3Ohm @ 1.7A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
220 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.