Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)300mA (Ta)1.3A (Ta)4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.7V2.7V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
94mOhm @ 10A, 10V160mOhm @ 1.5A, 4.5V1.7Ohm @ 200mA, 2.7V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
900mV @ 100µA1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V12 nC @ 10 V
Vgs (Max)
±8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V162 pF @ 10 V420 pF @ 20 V
Power Dissipation (Max)
350mW (Ta)370mW (Ta)500mW (Ta)3W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
355,786
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN2005K-7
MOSFET N-CH 20V 300MA SOT23-3
Diodes Incorporated
689,626
In Stock
285,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.57387
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
300mA (Ta)
1.8V, 2.7V
1.7Ohm @ 200mA, 2.7V
900mV @ 100µA
-
±10V
-
-
350mW (Ta)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
154,357
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20594
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SQ2389ES-T1_BE3
MOSFET P-CH 40V 4.1A SOT23-3
Vishay Siliconix
98,580
In Stock
1 : ¥5.42000
Cut Tape (CT)
3,000 : ¥2.05833
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
4.1A (Tc)
4.5V, 10V
94mOhm @ 10A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
420 pF @ 20 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.