Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedonsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)130mA (Ta)200mA (Ta)1A (Ta)1.5A (Ta)2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V2.5V, 4V4V, 10V5V5V, 10V
Rds On (Max) @ Id, Vgs
320mOhm @ 1A, 4V390mOhm @ 1A, 4.5V470mOhm @ 1.5A, 10V3.5Ohm @ 200mA, 5V7.5Ohm @ 50mA, 5V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 1mA2V @ 1mA2.5V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.1 nC @ 4.5 V322 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
45 pF @ 25 V50 pF @ 25 V150 pF @ 10 V160 pF @ 10 V950 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)300mW (Ta)370mW (Ta)500mW (Ta)600mW (Ta)800mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
MPT3SOT-23-3SOT-23-3 (TO-236)TSMT6 (SC-95)TUMT3
Package / Case
3-SMD, Flat LeadsSOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3TO-243AA
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
362,571
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26990
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS84-7-F
MOSFET P-CH 50V 130MA SOT23-3
Diodes Incorporated
445,241
In Stock
15,288,000
Factory
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32715
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 23-3
BSS138LT3G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
62,450
In Stock
1 : ¥2.96000
Cut Tape (CT)
10,000 : ¥0.38340
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SC-62_MPT3
2SK3065T100
MOSFET N-CH 60V 2A MPT3
Rohm Semiconductor
15,702
In Stock
1 : ¥9.36000
Cut Tape (CT)
1,000 : ¥2.69075
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
2.5V, 4V
320mOhm @ 1A, 4V
1.5V @ 1mA
-
±20V
160 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
MPT3
TO-243AA
TSMT6_TSMT6 Pkg
RQ6P015SPTR
MOSFET P-CH 100V 1.5A TSMT6
Rohm Semiconductor
23,108
In Stock
1 : ¥6.32000
Cut Tape (CT)
3,000 : ¥2.38675
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.5A (Ta)
4V, 10V
470mOhm @ 1.5A, 10V
2.5V @ 1mA
322 nC @ 10 V
±20V
950 pF @ 25 V
-
600mW (Ta)
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
TUMT3
RTF010P02TL
MOSFET P-CH 20V 1A TUMT3
Rohm Semiconductor
3,993
In Stock
1 : ¥5.34000
Cut Tape (CT)
3,000 : ¥1.79783
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
2.5V, 4.5V
390mOhm @ 1A, 4.5V
2V @ 1mA
2.1 nC @ 4.5 V
±12V
150 pF @ 10 V
-
800mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.