Single FETs, MOSFETs

Results: 2
Manufacturer
Microchip Technologyonsemi
Packaging
BagBulk
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V60 pF @ 25 V
Power Dissipation (Max)
400mW (Ta)1W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92-3(StandardBody),TO-226_straightlead
2N7000
MOSFET TO92 N 60V 0.2A 5OHM 150C
onsemi
44,712
In Stock
40,000
Factory
1 : ¥4.02000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
VP2106N3-G
MOSFET P-CH 60V 250MA TO92-3
Microchip Technology
2,223
In Stock
1 : ¥5.25000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
60 V
250mA (Tj)
5V, 10V
12Ohm @ 500mA, 10V
3.5V @ 1mA
±20V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.