Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.onsemi
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V80 V1200 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 64A (Tc)19.5A (Tc)33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V20V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 20A, 10V25mOhm @ 10A, 10V224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id
2.1V @ 1mA2.4V @ 580µA4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
16.7 nC @ 5 V33.8 nC @ 20 V34.6 nC @ 10 V
Vgs (Max)
±10V±20V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
678 pF @ 800 V2275 pF @ 25 V2312 pF @ 20 V
Power Dissipation (Max)
3.2W (Ta), 75W (Tc)75W (Tc)136W (Tc)
Supplier Device Package
8-WDFN (3.3x3.3)D2PAK-7LFPAK33
Package / Case
8-PowerWDFNSOT-1210, 8-LFPAK33 (5-Lead)TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFPAK33
BUK9M28-80EX
MOSFET N-CH 80V 33A LFPAK33
Nexperia USA Inc.
2,442
In Stock
1 : ¥7.31000
Cut Tape (CT)
1,500 : ¥3.10549
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
33A (Tc)
5V
25mOhm @ 10A, 10V
2.1V @ 1mA
16.7 nC @ 5 V
±10V
2275 pF @ 25 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
8-WDFN
NVTFS9D6P04M8LTAG
MOSFET P-CH 40V 13A/64A 8WDFN
onsemi
18,924
In Stock
3,000
Factory
1 : ¥11.66000
Cut Tape (CT)
1,500 : ¥5.13151
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
13A (Ta), 64A (Tc)
4.5V, 10V
9.5mOhm @ 20A, 10V
2.4V @ 580µA
34.6 nC @ 10 V
±20V
2312 pF @ 20 V
-
3.2W (Ta), 75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
D2PAK-7
NVBG160N120SC1
SICFET N-CH 1200V 19.5A D2PAK
onsemi
96
In Stock
5,600
Factory
1 : ¥93.92000
Cut Tape (CT)
800 : ¥59.18674
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
19.5A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
33.8 nC @ 20 V
+25V, -15V
678 pF @ 800 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.