Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
290mOhm @ 1.2A, 10V300mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V18 nC @ 10 V
Vgs (Max)
+10V, -20V±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 10 V620 pF @ 40 V
Power Dissipation (Max)
1W (Ta)3W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
244,734
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.69127
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
300mOhm @ 1A, 10V
2V @ 1mA
8.3 nC @ 10 V
+10V, -20V
330 pF @ 10 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-23-3
SQ2337ES-T1_BE3
MOSFET P-CH 80V 2.2A SOT23-3
Vishay Siliconix
295,035
In Stock
1 : ¥5.42000
Cut Tape (CT)
3,000 : ¥1.78768
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
2.2A (Tc)
6V, 10V
290mOhm @ 1.2A, 10V
2.5V @ 250µA
18 nC @ 10 V
±20V
620 pF @ 40 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.