Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
5.8A (Tc)36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 20A, 10V36mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
335 pF @ 15 V9685 pF @ 15 V
Power Dissipation (Max)
1.25W (Ta), 2.1W (Tc)3.5W (Ta), 7.8W (Tc)
Supplier Device Package
8-SOICSOT-23-3 (TO-236)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4497DY-T1-GE3
MOSFET P-CH 30V 36A 8SO
Vishay Siliconix
17,198
In Stock
1 : ¥14.86000
Cut Tape (CT)
2,500 : ¥6.70518
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
36A (Tc)
4.5V, 10V
3.3mOhm @ 20A, 10V
2.5V @ 250µA
285 nC @ 10 V
±20V
9685 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SOT-23-3
SI2366DS-T1-GE3
MOSFET N-CH 30V 5.8A SOT23-3
Vishay Siliconix
8,274
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.22304
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Tc)
10V
36mOhm @ 4.5A, 10V
2.5V @ 250µA
10 nC @ 10 V
±20V
335 pF @ 15 V
-
1.25W (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.