Single FETs, MOSFETs

Results: 2
Manufacturer
Littelfuse Inc.Vishay Siliconix
Series
-Linear
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
100 V500 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V20V
Rds On (Max) @ Id, Vgs
270mOhm @ 780mA, 5V300mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id
2V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V160 nC @ 20 V
Vgs (Max)
±10V±30V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V2500 pF @ 25 V
Power Dissipation (Max)
1.3W (Ta)400W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
4-HVMDIPTO-247 (IXTH)
Package / Case
4-DIP (0.300", 7.62mm)TO-247-3
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
4-DIP
IRLD120PBF
MOSFET N-CH 100V 1.3A 4DIP
Vishay Siliconix
3,509
In Stock
1 : ¥20.52000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
1.3A (Ta)
4V, 5V
270mOhm @ 780mA, 5V
2V @ 250µA
12 nC @ 5 V
±10V
490 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
TO-247-AD-EP-(H)
IXTH24N50L
MOSFET N-CH 500V 24A TO247
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥297.11000
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Active
N-Channel
MOSFET (Metal Oxide)
500 V
24A (Tc)
20V
300mOhm @ 500mA, 20V
5V @ 250µA
160 nC @ 20 V
±30V
2500 pF @ 25 V
-
400W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.