Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)46A (Tc)100A (Ta), 430A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.4mOhm @ 30A, 10V2mOhm @ 15A, 10V14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.2V @ 250µA2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V110 nC @ 10 V310 nC @ 10 V
Vgs (Max)
+12V, -8V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 25 V4560 pF @ 10 V12430 pF @ 10 V
Power Dissipation (Max)
3.5W (Ta), 7.8W (Tc)6.3W (Ta), 104W (Tc)140W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICPowerPAK® SO-8TO-252AA (DPAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR178DP-T1-RE3
MOSFET N-CH 20V 100A/430A PPAK
Vishay Siliconix
1,175
In Stock
1 : ¥13.63000
Cut Tape (CT)
3,000 : ¥6.14030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100A (Ta), 430A (Tc)
2.5V, 10V
0.4mOhm @ 30A, 10V
1.5V @ 250µA
310 nC @ 10 V
+12V, -8V
12430 pF @ 10 V
-
6.3W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO252-3
IRLR3110ZTRPBF
MOSFET N-CH 100V 42A DPAK
Infineon Technologies
12,140
In Stock
1 : ¥14.78000
Cut Tape (CT)
2,000 : ¥6.64979
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
42A (Tc)
4.5V, 10V
14mOhm @ 38A, 10V
2.5V @ 100µA
48 nC @ 4.5 V
±16V
3980 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-SOIC
SI4136DY-T1-GE3
MOSFET N-CH 20V 46A 8SO
Vishay Siliconix
3,800
In Stock
1 : ¥12.89000
Cut Tape (CT)
2,500 : ¥5.31947
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
46A (Tc)
4.5V, 10V
2mOhm @ 15A, 10V
2.2V @ 250µA
110 nC @ 10 V
±20V
4560 pF @ 10 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.