Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)40.2A (Ta), 263A (Tc)48A (Ta), 298A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
0.9mOhm @ 20A, 10V1.4mOhm @ 23A, 10V1.55mOhm @ 25A, 10V100mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
1.95V @ 1mA2.2V @ 200µA2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V65 nC @ 10 V131.4 nC @ 10 V217 nC @ 4.5 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
320 pF @ 15 V4044 pF @ 15 V9450 pF @ 15 V14950 pF @ 15 V
Power Dissipation (Max)
1.1W (Ta)3.3W (Ta), 138.9W (Tc)3.8W (Ta), 144W (Tc)179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)LFPAK56, Power-SO8SC-70-3
Package / Case
8-PowerTDFN, 5 LeadsSC-100, SOT-669SC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
5-DFN, 8-SO Flat Lead
NTMFS002P03P8ZT1G
MOSFET, POWER -30V P-CHANNEL, SO
onsemi
5,793
In Stock
1 : ¥25.37000
Cut Tape (CT)
1,500 : ¥13.09459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
40.2A (Ta), 263A (Tc)
4.5V, 10V
1.4mOhm @ 23A, 10V
3V @ 250µA
217 nC @ 4.5 V
±25V
14950 pF @ 15 V
-
3.3W (Ta), 138.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
9,279
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.14967
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2.6A (Ta)
4.5V, 10V
100mOhm @ 2.6A, 10V
2.2V @ 250µA
12 nC @ 10 V
±20V
320 pF @ 15 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
LFPAK56/POWER-SO8/SOT669
PSMN1R5-30YLC,115
MOSFET N-CH 30V 100A LFPAK56
Nexperia USA Inc.
4,904
In Stock
1 : ¥12.56000
Cut Tape (CT)
1,500 : ¥5.50177
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
1.55mOhm @ 25A, 10V
1.95V @ 1mA
65 nC @ 10 V
±20V
4044 pF @ 15 V
-
179W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
5-DFN, 8-SO Flat Lead
NTMFS0D9N03CGT1G
MOSFET N-CH 30V 48A/298A 5DFN
onsemi
1,515
In Stock
21,000
Factory
1 : ¥20.52000
Cut Tape (CT)
1,500 : ¥9.73732
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
48A (Ta), 298A (Tc)
10V
0.9mOhm @ 20A, 10V
2.2V @ 200µA
131.4 nC @ 10 V
±20V
9450 pF @ 15 V
-
3.8W (Ta), 144W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.