Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI7149DP-T1-GE3 MOSFET P-CH 30V 50A PPAK SO-8 Vishay Siliconix	22,859 In Stock	1 : ¥12.48000 Cut Tape (CT) 3,000 : ¥5.62440 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	5.2mOhm @ 15A, 10V	2.5V @ 250µA	147 nC @ 10 V	±25V	4590 pF @ 15 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
BSS138 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	199,939 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.22873 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	-	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BSS138 MOSFET, N-CH, SINGLE, 0.22A, 50V Good-Ark Semiconductor	49,590 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.25374 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Tj)	4.5V, 10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	2.4 nC @ 10 V	±20V	30 pF @ 25 V	-	430mW	-55°C ~ 175°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.