Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML6346TRPBF MOSFET N-CH 30V 3.4A SOT23 Infineon Technologies	73,718 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥0.83414 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.4A (Ta)	2.5V, 4.5V	63mOhm @ 3.4A, 4.5V	1.1V @ 10µA	2.9 nC @ 4.5 V	±12V	270 pF @ 24 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
AOSP66920 MOSFET N-CH 100V 13.5A 8SOIC Alpha & Omega Semiconductor Inc.	38,180 In Stock	1 : ¥10.34000 Cut Tape (CT) 3,000 : ¥4.26705 Tape & Reel (TR)	AlphaSGT™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	13.5A (Ta)	4.5V, 10V	8.5mOhm @ 13.5A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	2500 pF @ 50 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMYS011N04CTWG MOSFET N-CH 40V 13A/35A 4LFPAK onsemi	1,602 In Stock	1 : ¥10.10000 Cut Tape (CT) 3,000 : ¥6.00547 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	13A (Ta), 35A (Tc)	10V	12mOhm @ 10A, 10V	3.5V @ 20µA	7.9 nC @ 10 V	±20V	420 pF @ 25 V	-	3.8W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.