Single FETs, MOSFETs

Results: 2
Manufacturer
STMicroelectronicsVishay Siliconix
Series
MDmesh™ VTrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V650 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
57mOhm @ 3.6A, 4.5V78mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id
850mV @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V91 nC @ 10 V
Vgs (Max)
±8V±25V
Power Dissipation (Max)
710mW (Ta)210W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
150,679
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87979
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
D2Pak
STB45N65M5
MOSFET N CH 650V 35A D2PAK
STMicroelectronics
4,218
In Stock
1 : ¥61.00000
Cut Tape (CT)
1,000 : ¥34.57944
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
78mOhm @ 19.5A, 10V
5V @ 250µA
91 nC @ 10 V
±25V
3375 pF @ 100 V
-
210W (Tc)
150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.