Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STD2NK100Z MOSFET N-CH 1000V 1.85A DPAK STMicroelectronics	4,712 In Stock	1 : ¥18.23000 Cut Tape (CT) 2,500 : ¥8.22816 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	1.85A (Tc)	10V	8.5Ohm @ 900mA, 10V	4.5V @ 50µA	16 nC @ 10 V	±30V	499 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMYH200R100M1HXKSA1 SIC DISCRETE Infineon Technologies	181 In Stock	1 : ¥154.02000 Tube	CoolSiC™	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	2000 V	26A (Tc)	15V, 18V	131mOhm @ 10A, 18V	5.5V @ 6mA	55 nC @ 18 V	+20V, -7V	-	-	217W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-U04	TO-247-4
BSS138WH6327XTSA1 MOSFET N-CH 60V 280MA SOT323-3 Infineon Technologies	148,777 In Stock	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.54070 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	280mA (Ta)	4.5V, 10V	3.5Ohm @ 200mA, 10V	1.4V @ 26µA	1.5 nC @ 10 V	±20V	43 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323	SC-70, SOT-323
STP8NK100Z MOSFET N-CH 1000V 6.5A TO220AB STMicroelectronics	417 In Stock	1 : ¥41.46000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	6.5A (Tc)	10V	1.85Ohm @ 3.15A, 10V	4.5V @ 100µA	102 nC @ 10 V	±30V	2180 pF @ 25 V	-	160W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
APT9M100S MOSFET N-CH 1000V 9A D3PAK Microchip Technology	122 In Stock	1 : ¥48.77000 Tube	POWER MOS 8™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	9A (Tc)	10V	1.4Ohm @ 5A, 10V	5V @ 1mA	80 nC @ 10 V	±30V	2605 pF @ 25 V	-	335W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
RS6R035BHTB1 NCH 150V 35A, HSOP8, POWER MOSFE Rohm Semiconductor	2,454 In Stock	1 : ¥19.62000 Cut Tape (CT) 2,500 : ¥8.24061 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	6V, 10V	41mOhm @ 35A, 10V	4V @ 1mA	25 nC @ 10 V	±20V	1470 pF @ 75 V	-	3W (Ta), 73W (Tc)	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.