Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Ta)20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V43mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.32V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V4310 pF @ 15 V
Power Dissipation (Max)
1.6W (Ta)2.5W (Ta)
Operating Temperature
-55°C ~ 155°C (TJ)150°C (TJ)
Supplier Device Package
6-CPH8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7832TRPBF
MOSFET N-CH 30V 20A 8SO
Infineon Technologies
37,324
In Stock
1 : ¥10.51000
Cut Tape (CT)
4,000 : ¥4.34629
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
4mOhm @ 20A, 10V
2.32V @ 250µA
51 nC @ 4.5 V
±20V
4310 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 155°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TSOT-23-6, TSOT-6
CPH6350-TL-W
MOSFET P-CH 30V 6A 6CPH
onsemi
21,521
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.21571
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4V, 10V
43mOhm @ 3A, 10V
-
13 nC @ 10 V
±20V
600 pF @ 10 V
-
1.6W (Ta)
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.