Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V10V
Rds On (Max) @ Id, Vgs
32mOhm @ 4.2A, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA1.5V @ 250µA
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V655 pF @ 10 V
Power Dissipation (Max)
300mW (Ta)490mW (Ta), 5W (Tc)
Supplier Device Package
SOT-23-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138-7-F
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
205,497
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.28094
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMV30UN2R
MOSFET N-CH 20V 4.2A TO236AB
Nexperia USA Inc.
138,228
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83198
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.2V, 4.5V
32mOhm @ 4.2A, 4.5V
900mV @ 250µA
11 nC @ 4.5 V
±12V
655 pF @ 10 V
-
490mW (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.