Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

ZXM61P02FTA MOSFET P-CH 20V 900MA SOT23-3 Diodes Incorporated	30,382 In Stock 372,000 Factory	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.99221 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	900mA (Ta)	2.7V, 4.5V	600mOhm @ 610mA, 4.5V	1.5V @ 250µA	3.5 nC @ 4.5 V	±12V	150 pF @ 15 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRFH5015TRPBF MOSFET N-CH 150V 10A/56A 8PQFN Infineon Technologies	7,712 In Stock	1 : ¥15.60000 Cut Tape (CT) 4,000 : ¥7.03270 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	10A (Ta), 56A (Tc)	10V	31mOhm @ 34A, 10V	5V @ 150µA	50 nC @ 10 V	±20V	2300 pF @ 50 V	-	3.6W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IPB65R110CFDAATMA1 MOSFET N-CH 650V 31.2A D2PAK Infineon Technologies	840 In Stock	1 : ¥58.62000 Cut Tape (CT) 1,000 : ¥33.24413 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	110mOhm @ 12.7A, 10V	4.5V @ 1.3mA	118 nC @ 10 V	±20V	3240 pF @ 100 V	-	277.8W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.