Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 19.5A, 4.5V13.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V80 nC @ 8 V
Vgs (Max)
±8V±12V
Power Dissipation (Max)
1.5W (Ta)19W (Tc)
Supplier Device Package
PowerPAK® 1212-8PowerPAK® SC-70-6
Package / Case
PowerPAK® 1212-8PowerPAK® SC-70-6
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SI7106DN-T1-E3
MOSFET N-CH 20V 12.5A PPAK1212-8
Vishay Siliconix
51,475
In Stock
1 : ¥12.31000
Cut Tape (CT)
3,000 : ¥5.10915
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
12.5A (Ta)
2.5V, 4.5V
6.2mOhm @ 19.5A, 4.5V
1.5V @ 250µA
27 nC @ 4.5 V
±12V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPak SC-70-6 Single
SIA447DJ-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6
Vishay Siliconix
81,506
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥1.08063
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
12A (Tc)
1.5V, 4.5V
13.5mOhm @ 7A, 4.5V
850mV @ 250µA
80 nC @ 8 V
±8V
2880 pF @ 6 V
-
19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.