Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.Rohm SemiconductorToshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)330mA (Ta)1A (Ta)1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V1.8V, 4.5V4.5V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.5A, 4.5V200mOhm @ 1A, 4.5V1.31Ohm @ 100mA, 4.5V3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1V @ 1mA1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.2 nC @ 4 V2.5 nC @ 4.5 V3.9 nC @ 4.5 V
Vgs (Max)
±8V±10V±12V
Input Capacitance (Ciss) (Max) @ Vds
7.1 pF @ 10 V43 pF @ 10 V110 pF @ 10 V280 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)290mW (Ta), 1.67W (Tc)800mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C150°C (TJ)
Supplier Device Package
SOT-323TUMT3UFMVMT3
Package / Case
3-SMD, Flat LeadsSC-70, SOT-323SOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
PMF170XP,115
MOSFET P-CH 20V 1A SOT323
Nexperia USA Inc.
77,805
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.47169
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1A (Ta)
4.5V
200mOhm @ 1A, 4.5V
1.15V @ 250µA
3.9 nC @ 4.5 V
±12V
280 pF @ 10 V
-
290mW (Ta), 1.67W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
VMT3 Pkg
RUM001L02T2CL
MOSFET N-CH 20V 100MA VMT3
Rohm Semiconductor
721,987
In Stock
This product has a maximum purchase limit
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34652
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
±8V
7.1 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
TUMT3
RUF015N02TL
MOSFET N-CH 20V 1.5A TUMT3
Rohm Semiconductor
13,849
In Stock
This product has a maximum purchase limit
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30862
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
1.8V, 4.5V
180mOhm @ 1.5A, 4.5V
1V @ 1mA
2.5 nC @ 4.5 V
±10V
110 pF @ 10 V
-
800mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
5,209
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.54508
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
330mA (Ta)
1.5V, 4.5V
1.31Ohm @ 100mA, 4.5V
1V @ 1mA
1.2 nC @ 4 V
±8V
43 pF @ 10 V
-
800mW (Ta)
150°C
Surface Mount
UFM
3-SMD, Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.