Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
10A (Ta)11A (Ta)
Rds On (Max) @ Id, Vgs
11.9mOhm @ 11A, 10V12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.1 nC @ 10 V30.6 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
1276 pF @ 15 V1415 pF @ 15 V
FET Feature
-Schottky Diode (Body)
Power Dissipation (Max)
730mW (Ta)1.55W (Ta)
Supplier Device Package
8-SOU-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMN3016LFDE-13
MOSFET N-CH 30V 10A 6UDFN
Diodes Incorporated
28,958
In Stock
300,000
Factory
1 : ¥2.46000
Cut Tape (CT)
10,000 : ¥0.75941
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
12mOhm @ 11A, 10V
2V @ 250µA
25.1 nC @ 10 V
±20V
1415 pF @ 15 V
-
730mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
8 SO
DMS3015SSS-13
MOSFET N-CH 30V 11A 8SO
Diodes Incorporated
41,483
In Stock
27,500
Factory
1 : ¥3.53000
Cut Tape (CT)
2,500 : ¥1.18435
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
11A (Ta)
4.5V, 10V
11.9mOhm @ 11A, 10V
2.5V @ 250µA
30.6 nC @ 10 V
±12V
1276 pF @ 15 V
Schottky Diode (Body)
1.55W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.