Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V200 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
10.7mOhm @ 88A, 10V6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA4V @ 270µA
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V7100 pF @ 100 V
Power Dissipation (Max)
200mW (Ta)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO263-3SOT-323
Package / Case
SC-70, SOT-323TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS123WQ-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
241,911
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46763
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB107N20N3GATMA1
MOSFET N-CH 200V 88A D2PAK
Infineon Technologies
5,232
In Stock
1 : ¥64.53000
Cut Tape (CT)
1,000 : ¥33.83523
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
10.7mOhm @ 88A, 10V
4V @ 270µA
87 nC @ 10 V
±20V
7100 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.