Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
13.6A (Ta)40A (Tc)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 20A, 10V9.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 15 V1800 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta)46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)
Supplier Device Package
8-SOPG-TSDSON-8-FL
Package / Case
8-PowerTDFN8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF7821TRPBF
MOSFET N-CH 30V 13.6A 8SO
Infineon Technologies
12,146
In Stock
1 : ¥8.54000
Cut Tape (CT)
4,000 : ¥3.52117
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
13.6A (Ta)
4.5V, 10V
9.1mOhm @ 13A, 10V
1V @ 250µA
14 nC @ 4.5 V
±20V
1010 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 155°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TSDSON-8
BSZ065N06LS5ATMA1
MOSFET N-CH 60V 40A TSDSON
Infineon Technologies
10,000
In Stock
1 : ¥11.08000
Cut Tape (CT)
5,000 : ¥4.38078
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
6.5mOhm @ 20A, 10V
2.3V @ 20µA
13 nC @ 4.5 V
±20V
1800 pF @ 30 V
-
46W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.