Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiTaiwan Semiconductor Corporation
Series
-HEXFET®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)18A (Ta), 80A (Tc)29A (Tc)31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
5mOhm @ 80A, 10V40mOhm @ 16A, 10V60mOhm @ 16A, 10V190mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V34 nC @ 10 V63 nC @ 10 V80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
425 pF @ 30 V700 pF @ 25 V1200 pF @ 25 V3900 pF @ 25 V
Power Dissipation (Max)
1.56W (Tc)3.8W (Ta), 110W (Tc)3.8W (Ta), 68W (Tc)245W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
D2PAKSOT-23TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MFG_TO-236-3,-SC-59,-SOT-23-3
TSM2309CX RFG
MOSFET P-CHANNEL 60V 3.1A SOT23
Taiwan Semiconductor Corporation
48,818
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.11861
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.1A (Tc)
4.5V, 10V
190mOhm @ 3A, 10V
2.5V @ 250µA
8.2 nC @ 10 V
±20V
425 pF @ 30 V
-
1.56W (Tc)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF5305STRLPBF
MOSFET P-CH 55V 31A D2PAK
Infineon Technologies
13,013
In Stock
1 : ¥12.48000
Cut Tape (CT)
800 : ¥6.98860
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
31A (Tc)
10V
60mOhm @ 16A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1200 pF @ 25 V
-
3.8W (Ta), 110W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34NSTRLPBF
MOSFET N-CH 55V 29A D2PAK
Infineon Technologies
4,666
In Stock
1 : ¥12.48000
Cut Tape (CT)
800 : ¥6.72004
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
29A (Tc)
10V
40mOhm @ 16A, 10V
4V @ 250µA
34 nC @ 10 V
±20V
700 pF @ 25 V
-
3.8W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263
FDB050AN06A0
MOSFET N-CH 60V 18A/80A D2PAK
onsemi
1,237
In Stock
1 : ¥20.69000
Cut Tape (CT)
800 : ¥11.58701
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta), 80A (Tc)
6V, 10V
5mOhm @ 80A, 10V
4V @ 250µA
80 nC @ 10 V
±20V
3900 pF @ 25 V
-
245W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.