Single FETs, MOSFETs

Results: 9
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-CoolMOS™ C3HEXFET®OptiMOS™ 5OptiMOS™-5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
20 V40 V60 V75 V100 V800 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)4.2A (Ta)31A (Ta), 156A (Tc)33A (Ta), 200A (Tc)40A (Tc)54.9A (Tc)375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 120A, 10V1.9mOhm @ 94A, 10V2.3mOhm @ 96A, 10V3.5mOhm @ 74A, 10V4mOhm @ 20A, 10V4.8mOhm @ 20A, 10V45mOhm @ 4.2A, 4.5V85mOhm @ 1.5A, 10V85mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2V @ 17µA2.3V @ 36µA3V @ 250µA3.9V @ 3.3mA4V @ 150µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V12 nC @ 5 V12.3 nC @ 10 V29 nC @ 10 V134 nC @ 10 V288 nC @ 10 V300 nC @ 10 V
Vgs (Max)
±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
606 pF @ 20 V740 pF @ 15 V1560 pF @ 25 V3100 pF @ 30 V5469 pF @ 25 V7520 pF @ 100 V11560 pF @ 25 V12222 pF @ 25 V12320 pF @ 25 V
Power Dissipation (Max)
600mW (Ta)1.25W (Ta)3.3W (Ta), 125W (Tc)3.3W (Ta), 83W (Tc)48W (Tc)69W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DIRECTFET L6DirectFET™ Isometric L8Micro3™/SOT-23PG-TO247-3PG-TSDSON-8PG-TSDSON-8-FLX1-DFN1616-6 (Type E)
Package / Case
6-PowerUFDFN8-PowerTDFN8-PowerVDFNDirectFET™ Isometric L6DirectFET™ Isometric L8TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2502TRPBF
MOSFET N-CH 20V 4.2A SOT23
Infineon Technologies
90,189
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.10821
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
2.5V, 4.5V
45mOhm @ 4.2A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
740 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
IPZ40N04S5L4R8ATMA1
MOSFET N-CH 40V 40A 8TSDSON
Infineon Technologies
14,263
In Stock
1 : ¥7.72000
Cut Tape (CT)
5,000 : ¥3.03443
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
4.8mOhm @ 20A, 10V
2V @ 17µA
29 nC @ 10 V
±16V
1560 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TSDSON-8
8-PowerVDFN
TSDSON-8
BSZ040N06LS5ATMA1
MOSFET N-CH 60V 40A TSDSON
Infineon Technologies
73,687
In Stock
1 : ¥13.22000
Cut Tape (CT)
5,000 : ¥5.73136
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
2.3V @ 36µA
6.6 nC @ 4.5 V
±20V
3100 pF @ 30 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IRF7739L2TR1PBF
IRF7749L1TRPBF
MOSFET N-CH 60V 33A DIRECTFET
Infineon Technologies
9,680
In Stock
1 : ¥39.74000
Cut Tape (CT)
4,000 : ¥19.34899
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
33A (Ta), 200A (Tc)
10V
1.5mOhm @ 120A, 10V
4V @ 250µA
300 nC @ 10 V
±20V
12320 pF @ 25 V
-
3.3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric L8
DirectFET™ Isometric L8
AUIRFP4310Z BACK
SPW55N80C3FKSA1
MOSFET N-CH 800V 54.9A TO247-3
Infineon Technologies
517
In Stock
1 : ¥114.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
54.9A (Tc)
10V
85mOhm @ 32.6A, 10V
3.9V @ 3.3mA
288 nC @ 10 V
±20V
7520 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
X1-DFN1616-6
DMN6070SFCL-7
MOSFET N-CH 60V 3A X1-DFN1616-6
Diodes Incorporated
3,318
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.20096
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
4V, 10V
85mOhm @ 1.5A, 10V
3V @ 250µA
12.3 nC @ 10 V
±20V
606 pF @ 20 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
DIRECTFET L8
AUIRF7759L2TR
MOSFET N-CH 75V 375A DIRECTFET
Infineon Technologies
9,662
In Stock
1 : ¥73.81000
Cut Tape (CT)
4,000 : ¥39.24030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
375A (Tc)
10V
2.3mOhm @ 96A, 10V
4V @ 250µA
300 nC @ 10 V
±20V
12222 pF @ 25 V
-
3.3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric L8
DirectFET™ Isometric L8
DIRECTFET L8
AUIRF7769L2TR
MOSFET N-CH 100V 375A DIRECTFET
Infineon Technologies
7,917
In Stock
1 : ¥77.50000
Cut Tape (CT)
4,000 : ¥41.18083
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
375A (Tc)
10V
3.5mOhm @ 74A, 10V
4V @ 250µA
300 nC @ 10 V
±20V
11560 pF @ 25 V
-
3.3W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DirectFET™ Isometric L8
DirectFET™ Isometric L8
TO-263-7, D2Pak
AUIRF7737L2TR
MOSFET N-CH 40V 31A DIRECTFET
Infineon Technologies
7,383
In Stock
1 : ¥43.10000
Cut Tape (CT)
4,000 : ¥20.99091
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 156A (Tc)
10V
1.9mOhm @ 94A, 10V
4V @ 150µA
134 nC @ 10 V
±20V
5469 pF @ 25 V
-
3.3W (Ta), 83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DIRECTFET L6
DirectFET™ Isometric L6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.