Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 150A, 10V40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3.3V @ 280µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V16000 pF @ 30 V
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)375W (Tc)
Supplier Device Package
D2PAKPG-HSOF-8-1
Package / Case
8-PowerSFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPT059N15N3ATMA1
IPT007N06NATMA1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
14,842
In Stock
1 : ¥52.21000
Cut Tape (CT)
2,000 : ¥25.40434
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFZ34NSTRLPBF
MOSFET N-CH 55V 29A D2PAK
Infineon Technologies
4,666
In Stock
1 : ¥12.48000
Cut Tape (CT)
800 : ¥6.72004
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
29A (Tc)
10V
40mOhm @ 16A, 10V
4V @ 250µA
34 nC @ 10 V
±20V
700 pF @ 25 V
-
3.8W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.