Single FETs, MOSFETs

Results: 4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V80 V150 V
Current - Continuous Drain (Id) @ 25°C
185mA (Ta)2A (Ta)2.25A (Tc)150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V6V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 30A, 10V56mOhm @ 2A, 4.5V295mOhm @ 4A, 10V6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 15 V5.2 nC @ 4.5 V42 nC @ 10 V227 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
23 pF @ 25 V453 pF @ 20 V1190 pF @ 50 V10680 pF @ 40 V
Power Dissipation (Max)
350mW (Ta)5.9W (Tc)13.6W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICPowerPAK® SC-70-6SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)PowerPAK® SC-70-6TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
TP0610K-T1-E3
MOSFET P-CH 60V 185MA SOT23-3
Vishay Siliconix
768,018
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.04978
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
3V @ 250µA
1.7 nC @ 15 V
±20V
23 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPak SC-70-6 Single
SQA470EEJ-T1_GE3
MOSFET N-CH 30V 2.25A PPAK SC70
Vishay Siliconix
3,000
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.68653
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.25A (Tc)
2.5V, 4.5V
56mOhm @ 2A, 4.5V
1.6V @ 250µA
5.2 nC @ 4.5 V
±12V
453 pF @ 20 V
-
13.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
8-SOIC
SI4455DY-T1-GE3
MOSFET P-CH 150V 2A 8SO
Vishay Siliconix
31,248
In Stock
1 : ¥12.97000
Cut Tape (CT)
2,500 : ¥5.37608
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
2A (Ta)
6V, 10V
295mOhm @ 4A, 10V
4V @ 250µA
42 nC @ 10 V
±20V
1190 pF @ 50 V
-
5.9W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-263 (D2Pak)
SUM60020E-GE3
MOSFET N-CH 80V 150A TO263
Vishay Siliconix
2,254
In Stock
1 : ¥24.55000
Cut Tape (CT)
800 : ¥14.81211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
7.5V, 10V
2.1mOhm @ 30A, 10V
4V @ 250µA
227 nC @ 10 V
±20V
10680 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.