Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V150mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 4.5 V260 nC @ 10 V
Vgs (Max)
±12V±25V
Power Dissipation (Max)
568mW (Ta)2.5W (Ta)
Supplier Device Package
8-SOICSC-70-6
Package / Case
6-TSSOP, SC-88, SOT-3638-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS6681Z
MOSFET P-CH 30V 20A 8SOIC
onsemi
19,376
In Stock
1 : ¥17.24000
Cut Tape (CT)
2,500 : ¥7.79035
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
4.6mOhm @ 20A, 10V
3V @ 250µA
260 nC @ 10 V
±25V
7540 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SC-70-6
SI1403BDL-T1-E3
MOSFET P-CH 20V 1.4A SC70-6
Vishay Siliconix
4,873
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.40650
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.4A (Ta)
2.5V, 4.5V
150mOhm @ 1.5A, 4.5V
1.3V @ 250µA
4.5 nC @ 4.5 V
±12V
-
-
568mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.