Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiPanjit International Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)2A (Ta)3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
67mOhm @ 2.9A, 4.5V85mOhm @ 3.2A, 10V110mOhm @ 3.2A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V10 nC @ 10 V12.3 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V606 pF @ 20 V785 pF @ 30 V850 pF @ 10 V
Power Dissipation (Max)
225mW (Ta)800mW (Ta)1.2W (Ta)2W (Ta)
Supplier Device Package
SC-88/SC70-6/SOT-363SOT-23-3SOT-23-3 (TO-236)SOT-23-6
Package / Case
6-TSSOP, SC-88, SOT-363SOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
686,127
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37017
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN6075S-7
MOSFET N-CH 60V 2A SOT23
Diodes Incorporated
58,478
In Stock
801,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54954
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Ta)
4.5V, 10V
85mOhm @ 3.2A, 10V
3V @ 250µA
12.3 nC @ 10 V
±20V
606 pF @ 20 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-363
NVJS4151PT1G
MOSFET P-CH 20V 3.2A SC88
onsemi
65,648
In Stock
42,000
Factory
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.41204
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
67mOhm @ 2.9A, 4.5V
1.2V @ 250µA
10 nC @ 4.5 V
±12V
850 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SC-88/SC70-6/SOT-363
6-TSSOP, SC-88, SOT-363
SOT-23-6
PJS6461_S1_00001
60V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
18,529
In Stock
1 : ¥4.84000
Cut Tape (CT)
3,000 : ¥0.98101
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.2A (Ta)
4.5V, 10V
110mOhm @ 3.2A, 10V
2.5V @ 250µA
10 nC @ 10 V
±20V
785 pF @ 30 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-6
SOT-23-6
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.