Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.onsemiVishay Siliconix
Series
-TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)360mA (Ta)10A (Ta)12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
15mOhm @ 10A, 10V19mOhm @ 9A, 10V1.6Ohm @ 500mA, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA2.4V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V42 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V50 pF @ 25 V1500 pF @ 15 V3000 pF @ 20 V
Power Dissipation (Max)
225mW (Ta)350mW (Ta)1.7W (Ta)4.8W (Tc)
Supplier Device Package
8-SOICSOT-23-3 (TO-236)TO-236AB
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
430,205
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
536,844
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
Vishay Siliconix
34,086
In Stock
1 : ¥3.86000
Cut Tape (CT)
2,500 : ¥1.03815
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12.6A (Tc)
4.5V, 10V
19mOhm @ 9A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
1500 pF @ 15 V
-
4.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
22,170
In Stock
1 : ¥7.31000
Cut Tape (CT)
3,000 : ¥2.76493
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10A (Ta)
4.5V, 10V
15mOhm @ 10A, 10V
2.5V @ 250µA
55 nC @ 10 V
±20V
3000 pF @ 20 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.