Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.3V, 10V
Rds On (Max) @ Id, Vgs
230mOhm @ 1.6A, 10V270mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.2 nC @ 4.5 V9.2 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
79.3 pF @ 15 V497 pF @ 50 V
Power Dissipation (Max)
330mW (Ta), 2.1W (Tc)1.1W (Ta)
Supplier Device Package
SOT-26TO-236AB
Package / Case
SOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 26
ZXMN10B08E6TA
MOSFET N-CH 100V 1.6A SOT26
Diodes Incorporated
14,033
In Stock
294,000
Factory
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥2.29987
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
4.3V, 10V
230mOhm @ 1.6A, 10V
3V @ 250µA
9.2 nC @ 10 V
±20V
497 pF @ 50 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
TO-236AB
BSH103BKR
BSH103BK - 30 V, N-CHANNEL TRENC
Nexperia USA Inc.
17,443
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1A (Ta)
1.8V, 4.5V
270mOhm @ 1A, 4.5V
1.25V @ 250µA
1.2 nC @ 4.5 V
±12V
79.3 pF @ 15 V
-
330mW (Ta), 2.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.