Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiVishay Siliconix
Series
-HEXFET®QFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
20 V30 V60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)1.7A (Tc)14.1A (Ta)85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V3.7V, 10V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
7mOhm @ 9A, 10V19mOhm @ 30A, 10V120mOhm @ 3.8A, 10V250mOhm @ 930mA, 4.5V350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)2V @ 250µA2.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 4.5 V5.5 nC @ 10 V6 nC @ 5 V22.6 nC @ 10 V110 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 15 V290 pF @ 25 V344 pF @ 15 V1320 pF @ 15 V4750 pF @ 25 V
Power Dissipation (Max)
540mW (Ta)800mW (Ta)2W (Tc)3.3W (Tc)3.75W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
Micro3™/SOT-23SC-70-6SOT-223-4TO-263 (D2PAK)U-DFN2020-6 (Type F)
Package / Case
6-TSSOP, SC-88, SOT-3636-UDFN Exposed PadTO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23
Infineon Technologies
61,622
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87569
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
1.2A (Ta)
2.7V, 4.5V
250mOhm @ 930mA, 4.5V
700mV @ 250µA (Min)
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SC-70-6
SQ1440EH-T1_GE3
MOSFET N-CH 60V 1.7A SC70-6
Vishay Siliconix
17,312
In Stock
1 : ¥4.76000
Cut Tape (CT)
3,000 : ¥1.59853
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
1.7A (Tc)
4.5V, 10V
120mOhm @ 3.8A, 10V
2.5V @ 250µA
5.5 nC @ 10 V
±20V
344 pF @ 15 V
-
3.3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
SOT223-3L
FQT7N10LTF
MOSFET N-CH 100V 1.7A SOT223-4
onsemi
11,628
In Stock
1 : ¥5.83000
Cut Tape (CT)
4,000 : ¥2.21903
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.7A (Tc)
5V, 10V
350mOhm @ 850mA, 10V
2V @ 250µA
6 nC @ 5 V
±20V
290 pF @ 25 V
-
2W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
U-DFN2020-6 Type F
DMT3006LFDF-7
MOSFET N-CH 30V 14.1A 6UDFN
Diodes Incorporated
23,955
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.37068
Tape & Box (TB)
-
Cut Tape (CT)
Digi-Reel®
Tape & Box (TB)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
14.1A (Ta)
3.7V, 10V
7mOhm @ 9A, 10V
3V @ 250µA
22.6 nC @ 10 V
±20V
1320 pF @ 15 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
TO-263 (D2Pak)
SUM85N15-19-E3
MOSFET N-CH 150V 85A TO263
Vishay Siliconix
1,000
In Stock
1 : ¥46.14000
Cut Tape (CT)
800 : ¥27.86079
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
85A (Tc)
10V
19mOhm @ 30A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
4750 pF @ 25 V
-
3.75W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.