Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta)10A (Ta)12A (Ta), 50A (Tc)12A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 50A, 10V15mOhm @ 10A, 10V24mOhm @ 7.8A, 10V25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 23µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V45 nC @ 10 V53.1 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 15 V2569 pF @ 30 V3000 pF @ 20 V3500 pF @ 30 V
Power Dissipation (Max)
1W (Ta)1.7W (Ta)2.5W (Ta), 50W (Tc)3.2W (Ta), 15.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)
Supplier Device Package
8-SOICPG-TDSON-8-5POWERDI3333-8PowerPAK® 1212-8
Package / Case
8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)PowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS412DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
Vishay Siliconix
54,402
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.77239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
24mOhm @ 7.8A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
435 pF @ 15 V
-
3.2W (Ta), 15.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
20,029
In Stock
1 : ¥7.31000
Cut Tape (CT)
3,000 : ¥2.76493
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10A (Ta)
4.5V, 10V
15mOhm @ 10A, 10V
2.5V @ 250µA
55 nC @ 10 V
±20V
3000 pF @ 20 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-Power TDFN
BSC100N06LS3GATMA1
MOSFET N-CH 60V 12A/50A TDSON
Infineon Technologies
6,145
In Stock
1 : ¥9.19000
Cut Tape (CT)
5,000 : ¥3.62190
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
12A (Ta), 50A (Tc)
4.5V, 10V
10mOhm @ 50A, 10V
2.2V @ 23µA
45 nC @ 10 V
±20V
3500 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
PowerDI3333-8
DMP6023LFGQ-7
MOSFET P-CH 60V 7.7A PWRDI3333-8
Diodes Incorporated
4,854
In Stock
450,000
Factory
1 : ¥5.91000
Cut Tape (CT)
2,000 : ¥2.25745
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.7A (Ta)
4.5V, 10V
25mOhm @ 5A, 10V
3V @ 250µA
53.1 nC @ 10 V
±20V
2569 pF @ 30 V
-
1W (Ta)
-55°C ~ 155°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.